Photodetection mechanism in p-channel pseudomorphic MODFET

Authors
Lee, JKim, HJKim, DMZimmermann, J
Issue Date
2000
Publisher
SPIE-INT SOC OPTICAL ENGINEERING
Citation
Conference on Physics and Simulation of Optoelectronic Devices VIII, v.3944, pp.737 - 745
Abstract
The use of microwave semiconductor devices as photodetectors or optically controlled circuit elements have attracted growing interest. We have systematically characterized the optical response of p-channel pseudomorphic MODFET as a function of the drain voltage, gate voltage, and optical power of the illumination. Physical mechanisms responsible for the variation of the device characteristics clue to the optical illumination are discussed and analytic models are developed for strong non-linear behavior of the threshold voltage and the photoresponsivity with the optical power of the illumination.
ISSN
0277-786X
URI
https://pubs.kist.re.kr/handle/201004/118205
DOI
10.1117/12.391482
Appears in Collections:
KIST Conference Paper > 2000
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