Photodetection mechanism in p-channel pseudomorphic MODFET
- Authors
- Lee, J; Kim, HJ; Kim, DM; Zimmermann, J
- Issue Date
- 2000
- Publisher
- SPIE-INT SOC OPTICAL ENGINEERING
- Citation
- Conference on Physics and Simulation of Optoelectronic Devices VIII, v.3944, pp.737 - 745
- Abstract
- The use of microwave semiconductor devices as photodetectors or optically controlled circuit elements have attracted growing interest. We have systematically characterized the optical response of p-channel pseudomorphic MODFET as a function of the drain voltage, gate voltage, and optical power of the illumination. Physical mechanisms responsible for the variation of the device characteristics clue to the optical illumination are discussed and analytic models are developed for strong non-linear behavior of the threshold voltage and the photoresponsivity with the optical power of the illumination.
- ISSN
- 0277-786X
- URI
- https://pubs.kist.re.kr/handle/201004/118205
- DOI
- 10.1117/12.391482
- Appears in Collections:
- KIST Conference Paper > 2000
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.