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A plausible method of preparing the ideal p -n junction interface of a thermoelectric material by surface doping

Authors

Lee, Ji-Eun; Hwang, Jinwoong; Kang, Minhee; Joo, Hyun-Jeong; Ryu, Hyejin; Kim, Kyoo; Kim, Yongsam; Kim, Namdong; Anh Tuan Duong; Cho, Sunglae; Mo, Sung-Kwan; Hwang, Choongyu; Yang, Imjeong Ho-Soon

Issue Date

2020-08-01

Publisher

ELSEVIER

Citation

APPLIED SURFACE SCIENCE, v.520

Keywords

ELECTRONIC-STRUCTURE; TEMPERATURE; PERFORMANCE; NITRIDE; MODEL; ELECTRONIC-STRUCTURE; TEMPERATURE; PERFORMANCE; NITRIDE; MODEL; Angle-resolved photoemission; Charge transfer; p-n junction; SnSe; Tantalum

ISSN

0169-4332

URI

https://pubs.kist.re.kr/handle/201004/118275

DOI

10.1016/j.apsusc.2020.146314

Appears in Collections:

KIST Article > 2020

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