Maximizing Short Circuit Current Density and Open Circuit Voltage in Oxygen Vacancy-Controlled Bi1-xCaxFe1-yTiyO3-delta Thin-Film Solar Cells
- Authors
- Nandy, Subhajit; Kaur, Kulwmder; Gautam, Sanjeev; Chae, Keun Hwa; Nanda, B. R. K.; Sudakar, Chandran
- Issue Date
- 2020-03-25
- Publisher
- American Chemical Society
- Citation
- ACS Applied Materials & Interfaces, v.12, no.12, pp.14105 - 14118
- Abstract
- Designing solid-state perovskite oxide solar cells with large short circuit current (J(SC)) and open circuit voltage (V-OC) has been a challenging problem. Epitaxial BiFeO3 (BFO) films are known to exhibit large V-OC (>50 V). However, they exhibit low J(SC )(<<mu A/cm(2)) under 1 Sun illumination. In this work, taking polycrystalline BiFeO3 thin films, we demonstrate that oxygen vacancies (V-O) present within the lattice and at grain boundary (GB) can explicitly be controlled to achieve hie J(SC) and V-OC simultaneously. While aliovalent substitution (Ca2+ at Bi3+ site) is used to control the lattice V-O, Ca and Ti cosubstitution is used to bring out only GB-V-O. Fluorine-doped tin oxide (FTO)/Bi1-xCaxFe1-yTiyO3-delta/Au devices are tested for photovoltaic characteristics. Introducing V-O increases the photocurrent by four orders (J(SC) similar to 3 mA/cm(2)). On the contrary, V-OC is found to be <0.5 V, as against 0.5-3 V observed for the pristine BiFeO3. Ca and Ti cosubstitution facilitate the formation of smaller crystallites, which in turn increase the GB area and thereby the GB-V-O. This creates defect bands occupying the bulk band gap, as inferred from the diffused reflection spectra and band structure calculations, leading to a three-order increase in J(SC). The cosubstitution, following a charge compensation mechanism, decreases the lattice V-O concentration significantly to retain the ferroelectric nature with enhanced polarization. It helps to achieve V-OC (3-8 V) much larger than that of BiFeO3 (0.5-3 V). It is noteworthy that as Ca substitution maintains moderate crystallite size, the lattice V-O concentration dominates GB-V-O concentration. Notwithstanding, both lattice and GB-V-O contribute to the increase in J(SC); the former weakens ferroelectricity, and as a consequence, undesirably, V-OC is lowered well below 0.5 V. Using optimum J(SC) and V-OC, we demonstrate that the efficiency -0.22% can be achieved in solid-state BFO solar cells under AM 1.5 one Sun illumination.
- Keywords
- FERROELECTRIC PROPERTIES; DEPOLARIZATION-FIELD; BIFEO3; OXIDE; FERROELECTRIC PROPERTIES; DEPOLARIZATION-FIELD; BIFEO3; OXIDE; photovoltaic; oxygen vacancies; ferroelectric domain; bismuth ferrite; perovskite
- ISSN
- 1944-8244
- URI
- https://pubs.kist.re.kr/handle/201004/118837
- DOI
- 10.1021/acsami.9b18357
- Appears in Collections:
- KIST Article > 2020
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