Accurate determination of low-field mobility in tri-gate junctionless transistors

Abstract

The simple device structure of junctionless transistors (JLTs), which lack PN junctions and involve bulk-conduction-based operation, is an attractive component for the future fulfilment of Moore's law. However, the unique bulk conduction mechanism of JLTs introduces inaccuracies in low-field mobility (mu(0)) extracted from conventional Y-function method. The top channel width-dependent mu(0) error of tri-gate JLTs was investigated using numerical simulation and analytical modeling. This work provides important information for an accurate determination of mu(0) in tri-gate JLTs.