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dc.contributor.authorChoi, Minho-
dc.contributor.authorChoi, Heechae-
dc.contributor.authorAhn, Jinho-
dc.contributor.authorKim, Yong Tae-
dc.date.accessioned2024-01-19T19:30:34Z-
dc.date.available2024-01-19T19:30:34Z-
dc.date.created2021-09-05-
dc.date.issued2019-09-
dc.identifier.issn1359-6462-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/119623-
dc.description.abstractTo overcome the reliability issue of phase-change memory, the development of stable phase-change materials is extremely important. In this study, we analyze 13 dopants for Ge2Sb2Te5 (GST) based on two criteria: i) the change in thermal stability by doping and ii) a lattice distortion. After doping the elements, 11 elements showed a negative doping formation energy compared with pure GST. The angular distortion of the Zn dopant is the largest. The hole carrier decreases, and the electrical resistance increases through Zn-doping in GST. The increased resistance of the material can lead to low power consumption with a high energy effectiveness. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectGENERALIZED GRADIENT APPROXIMATION-
dc.subjectDOPED GE2SB2TE5-
dc.subjectELECTRICAL-PROPERTIES-
dc.subjectFILMS-
dc.titleMaterial design for Ge2Sb2Te5 phase-change material with thermal stability and lattice distortion-
dc.typeArticle-
dc.identifier.doi10.1016/j.scriptamat.2019.05.024-
dc.description.journalClass1-
dc.identifier.bibliographicCitationSCRIPTA MATERIALIA, v.170, pp.16 - 19-
dc.citation.titleSCRIPTA MATERIALIA-
dc.citation.volume170-
dc.citation.startPage16-
dc.citation.endPage19-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000475994700004-
dc.identifier.scopusid2-s2.0-85066266023-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryMetallurgy & Metallurgical Engineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaMetallurgy & Metallurgical Engineering-
dc.type.docTypeArticle-
dc.subject.keywordPlusGENERALIZED GRADIENT APPROXIMATION-
dc.subject.keywordPlusDOPED GE2SB2TE5-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorPhase-change material-
dc.subject.keywordAuthorPhase-change memory-
dc.subject.keywordAuthorDoping-
dc.subject.keywordAuthorGe2Sb2Te5-
dc.subject.keywordAuthorLattice distortion-
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