Trapped charge modulation at the MoS2/SiO2 interface by a lateral electric field in MoS(2 )field-effect transistors

Authors
Pak, JinsuCho, KyungjuneKim, Jae-KeunJang, YeonsikShin, JiwonKim, JaeyoungSeo, JunseokChung, SeungjunLee, Takhee
Issue Date
2019-03
Publisher
IOP PUBLISHING LTD
Citation
NANO FUTURES, v.3, no.1
Abstract
Controlling trapped charges at the interface between a two-dimensional (2D) material and SiO2 is crucial for the stable electrical characteristics in field-effect transistors (FETs). Typically, gate-source bias has been used to modulate the charge trapping process with a narrow dielectric layer with a high gate electric field. Here, we observed that charge trapping can also be affected by the lateral drain-source voltage (V-DS) in the FET structure, as well as by the gate-source bias. Through multiple V-DS sweeps with increasing measurement ranges of the V-DS, we demonstrated that the charge trapping process could be modulated by the range of the applied lateral electric field. Moreover, we inserted a hexagonal boron nitride (h-BN) layer between the MoS2 and SiO2 layer to explore the charge trapping behavior when abetter interface is formed. This study provides a deeper understanding of controlling the electrical characteristics with interface-trapped carriers and lateral electrical fields in 2D material-based transistors.
Keywords
high electric fields; MoS2; field-effect transistors; charge trapping
ISSN
2399-1984
URI
https://pubs.kist.re.kr/handle/201004/120261
DOI
10.1088/2399-1984/aafc3a
Appears in Collections:
KIST Article > 2019
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