Ultrathin Metal Crystals: Growth on Supported Graphene Surfaces and Applications

Authors
Chae, Soo SangJang, SeunghunLee, WonkiJung, Du WonLee, Keun HoKim, Jung DongJeong, DohyeonChang, HyunjuHwang, Jun YeonLee, Jeong-O.
Issue Date
2018-09-27
Publisher
WILEY-V C H VERLAG GMBH
Citation
SMALL, v.14, no.39
Abstract
Controlled nucleation and growth of metal clusters in metal deposition processes is a long-standing issue for thin-film-based electronic devices. When metal atoms are deposited on solid surfaces, unintended defects sites always lead to a heterogeneous nucleation, resulting in a spatially nonuniform nucleation with irregular growth rates for individual nuclei, resulting in a rough film that requires a thicker film to be deposited to reach the percolation threshold. In the present study, it is shown that substrate-supported graphene promotes the lateral 2D growth of metal atoms on the graphene. Transmission electron microscopy reveals that 2D metallic single crystals are grown epitaxially on supported graphene surfaces while a pristine graphene layer hardly yields any metal nucleation. A surface energy barrier calculation based on density functional theory predicts a suppression of diffusion of metal atoms on electronically perturbed graphene (supported graphene). 2D single Au crystals grown on supported graphene surfaces exhibit unusual near-infrared plasmonic resonance, and the unique 2D growth of metal crystals and self-healing nature of graphene lead to the formation of ultrathin, semitransparent, and biodegradable metallic thin films that could be utilized in various biomedical applications.
Keywords
GOLD NANOPARTICLES; THIN-FILMS; TRANSPARENCY; NUCLEATION; DEPOSITION; TEMPLATE; CLUSTERS; THERAPY; OXIDE; HOPG; GOLD NANOPARTICLES; THIN-FILMS; TRANSPARENCY; NUCLEATION; DEPOSITION; TEMPLATE; CLUSTERS; THERAPY; OXIDE; HOPG; crystal growth; graphene; photothermal effect; semitransparent conducting films
ISSN
1613-6810
URI
https://pubs.kist.re.kr/handle/201004/120889
DOI
10.1002/smll.201801529
Appears in Collections:
KIST Article > 2018
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