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dc.contributor.authorShim, Jae-Phil-
dc.contributor.authorKim, Seong Kwang-
dc.contributor.authorKim, Hansung-
dc.contributor.authorJu, Gunwu-
dc.contributor.authorLim, Heejeong-
dc.contributor.authorKim, SangHyeon-
dc.contributor.authorKim, Hyung-jun-
dc.date.accessioned2024-01-19T23:34:05Z-
dc.date.available2024-01-19T23:34:05Z-
dc.date.created2021-09-03-
dc.date.issued2018-01-
dc.identifier.issn2166-532X-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/121858-
dc.description.abstractWe demonstrated ultra-thin-body (UTB) junctionless (JL) p-type field-effect transistors (pFETs) on Si using GaAs channels. Wafer bonding and epitaxial lift-off techniques were employed to fabricate the UTB p-GaAs-on-insulator on a Si template. Subsequently, we evaluated the JL FETs having different p-GaAs channel thicknesses considering both maximum depletion width and doping concentration for high performance. Furthermore, by introducing a double-gate operation, we more effectively controlled threshold voltage and attained an even higher I-ON/I-OFF of > 10(6), as well as a low subthreshold swing value of 300 mV/dec. (c) 2018 Author(s).-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectTRANSISTORS-
dc.subjectTRANSPORT-
dc.subjectMOSFETS-
dc.subjectWAFER-
dc.titleDouble-gated ultra-thin-body GaAs-on-insulator p-FETs on Si-
dc.typeArticle-
dc.identifier.doi10.1063/1.5000532-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPL MATERIALS, v.6, no.1-
dc.citation.titleAPL MATERIALS-
dc.citation.volume6-
dc.citation.number1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000423723700004-
dc.identifier.scopusid2-s2.0-85040567705-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusMOSFETS-
dc.subject.keywordPlusWAFER-
dc.subject.keywordAuthorGaAs-
dc.subject.keywordAuthordouble-gate-
dc.subject.keywordAuthorWafer bonding-
dc.subject.keywordAuthorEpitaxial lift-off-
dc.subject.keywordAuthorjunctionless-
dc.subject.keywordAuthorultra-thin-body-
dc.subject.keywordAuthorp-FET-
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