Reconfigurable Si Nanowire Nonvolatile Transistors

Authors
Park, So JeongJeon, Dae-YoungPiontek, SabrinaGrube, MatthiasOcker, JohannesSessi, ViolettaHeinzig, AndreTrommer, JensKim, Gyu-TaeMikolajick, ThomasWeber, Walter M.
Issue Date
2018-01
Publisher
WILEY
Citation
ADVANCED ELECTRONIC MATERIALS, v.4, no.1
Abstract
Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge-trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.
Keywords
SILICON NANOWIRE; SONOS MEMORY; BARRIER; SILICON NANOWIRE; SONOS MEMORY; BARRIER; intrinsic silicon nanowires; nonvolatile transistors; reconfigurable field effect transistors; reconfigurable memory; Schottky barrier
ISSN
2199-160X
URI
https://pubs.kist.re.kr/handle/201004/121867
DOI
10.1002/aelm.201700399
Appears in Collections:
KIST Article > 2018
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