Mixed-Dimensional 1D ZnO-2D WSe2 van der Waals Heterojunction Device for Photosensors
- Authors
- Lee, Young Tack; Jeon, Pyo Jin; Han, Jae Hyun; Ahn, Jongtae; Lee, Hyo Sun; Lim, June Yeong; Choi, Won Kook; Song, Jin Dong; Park, Min-Chul; Im, Seongil; Hwang, Do Kyung
- Issue Date
- 2017-12-15
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- ADVANCED FUNCTIONAL MATERIALS, v.27, no.47
- Abstract
- 2D layered van der Waals (vdW) atomic crystals are an emerging class of new materials that are receiving increasing attention owing to their unique properties. In particular, the dangling-bond-free surface of 2D materials enables integration of differently dimensioned materials into mixed-dimensional vdW heterostructures. Such mixed-dimensional heterostructures herald new opportunities for conducting fundamental nanoscience studies and developing nanoscale electronic/optoelectronic applications. This study presents a 1D ZnO nanowire (n-type)-2D WSe2 nanosheet (p-type) vdW heterojunction diode for photodetection and imaging process. After amorphous fluoro-polymer passivation, the ZnO-WSe2 diode shows superior performance with a much-enhanced rectification (ON/OFF) ratio of over 106 and an ideality factor of 3.4-3.6 due to the carbon-fluorine (C-F) dipole effect. This heterojunction device exhibits spectral photoresponses from ultraviolet (400 nm) to near infrared (950 nm). Furthermore, a prototype visible imager is demonstrated using the ZnO-WSe2 heterojunction diode as an imaging pixel. To the best of our knowledge, this is the first demonstration of an optoelectronic device based on a 1D-2D hybrid vdW heterojunction. This approach using a 1D ZnO-2D WSe2 heterojunction paves the way for the further development of electronic/optoelectronic applications using mixed-dimensional vdW heterostructures.
- Keywords
- FIELD-EFFECT TRANSISTORS; 2D SEMICONDUCTOR; HIGH-PERFORMANCE; TOP-GATE; METAL; TRANSITION; GRAPHENE; OPTOELECTRONICS; JUNCTIONS; DIODE; FIELD-EFFECT TRANSISTORS; 2D SEMICONDUCTOR; HIGH-PERFORMANCE; TOP-GATE; METAL; TRANSITION; GRAPHENE; OPTOELECTRONICS; JUNCTIONS; DIODE; 1D ZnO; 2D WSe2; imagers; mixed-dimensional van der Waals heterojunctions; photodetectors
- ISSN
- 1616-301X
- URI
- https://pubs.kist.re.kr/handle/201004/121916
- DOI
- 10.1002/adfm.201703822
- Appears in Collections:
- KIST Article > 2017
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