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dc.contributor.authorEl Dirani, H.-
dc.contributor.authorLee, K. H.-
dc.contributor.authorParihar, M. S.-
dc.contributor.authorLacord, J.-
dc.contributor.authorMartinie, S.-
dc.contributor.authorBarbe, J-Ch.-
dc.contributor.authorMescot, X.-
dc.contributor.authorFonteneau, P.-
dc.contributor.authorBroquin, J. -E.-
dc.contributor.authorGhibaudo, G.-
dc.contributor.authorGaly, Ph-
dc.contributor.authorGamiz, F.-
dc.contributor.authorTaur, Y.-
dc.contributor.authorKim, Y. -T.-
dc.contributor.authorCristoloveanu, S.-
dc.contributor.authorBawedin, M.-
dc.date.accessioned2024-01-20T01:04:18Z-
dc.date.available2024-01-20T01:04:18Z-
dc.date.created2021-09-05-
dc.date.issued2017-06-25-
dc.identifier.issn0167-9317-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/122613-
dc.description.abstractA systematic study of a capacitorless 1T-DRAM fabricated in 28 nm FDSOI technology is presented. The operation mechanism is based on band modulation. The Z(2)-FET memory cell features a large current sense margin and small OFF-state current at 25 degrees C and 85 degrees C. Moreover, low power consumption during state '1' writing is achieved with similar to 0.5 V programming voltage. These specifications make the Z(2)-FET an outstanding candidate for low-power eDRAM applications. (C) 2017 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER-
dc.subjectCAPACITORLESS 1T-DRAM-
dc.subjectGATE-
dc.subjectZ(2)-FET-
dc.subjectDEVICES-
dc.titleUltra-low power 1T-DRAM in FDSOI technology-
dc.typeArticle-
dc.identifier.doi10.1016/j.mee.2017.05.047-
dc.description.journalClass1-
dc.identifier.bibliographicCitationMICROELECTRONIC ENGINEERING, v.178, pp.245 - 249-
dc.citation.titleMICROELECTRONIC ENGINEERING-
dc.citation.volume178-
dc.citation.startPage245-
dc.citation.endPage249-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000404703800056-
dc.identifier.scopusid2-s2.0-85019871691-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryOptics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaOptics-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusCAPACITORLESS 1T-DRAM-
dc.subject.keywordPlusGATE-
dc.subject.keywordPlusZ(2)-FET-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordAuthorFully Depleted Silicon-On-Insulator (FDSOI)-
dc.subject.keywordAuthorSharp switch-
dc.subject.keywordAuthorZ(2)-FET-
dc.subject.keywordAuthorLow-power-
dc.subject.keywordAuthorEmbedded memory-
dc.subject.keywordAuthor1T-DRAM-
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