Instantaneous Pulsed-Light Cross-Linking of a Polymer Gate Dielectric for Flexible Organic Thin-Film Transistors

Authors
Kim, Soo JinJang, MiYang, Hee YeonCho, JinhanLim, Ho SunYang, HoichangLim, Jung Ah
Issue Date
2017-04-05
Publisher
American Chemical Society
Citation
ACS Applied Materials & Interfaces, v.9, no.13, pp.11721 - 11731
Abstract
We report the instantaneous pulsed-light cross linking of polymer gate dielectrics on a flexible substrate by using intensely pulsed white light (IPWL) irradiation. Irradiation with IPWL for only 1.8 s of a poly(4-vinylphenol) (PVP) thin film with the cross-linking agent poly(melamine-co-formaldehyde) (PMF) deposited on a plastic substrate was found to yield fully cross linked PVP films. It was confirmed that the IPWL-cross-linked PVP films have smooth pinhole free surfaces and exhibit a low leakage current density, organic solvent, resistance; and good compatibility with organic semiconductor, and that they can be used as replacements for typical PVP dielectrics that are cross-linked with time and energy intensive thermal heating processes. The synchronization of the IPWL irradiation with substrate transfer was found to enable the preparation of cross-linked PVP films on large area substrates with a highly unifirm capacitance. Flexible OTFT based on IPWL-cross-linked PVP dielectrics were found to exhibit good electrical performance that is comparable to that of devices with thermally cross-linked PVP dielectric, as well as excellent deformation stability even at a bending radius of 3 mm.
Keywords
HIGH-PERFORMANCE; EFFICIENT PRODUCTION; FLASH; TEMPERATURE; NANOTUBES; POLYIMIDE; HIGH-PERFORMANCE; EFFICIENT PRODUCTION; FLASH; TEMPERATURE; NANOTUBES; POLYIMIDE; intensely pulsed white light; cross-linking; gate dielectric; organic thin-film transistors; flexible substrate
ISSN
1944-8244
URI
https://pubs.kist.re.kr/handle/201004/122854
DOI
10.1021/acsami.6b14957
Appears in Collections:
KIST Article > 2017
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