A strategy to minimize the sensing voltage drift error in a transistor biosensor with a nanoscale sensing gate

Authors
Son, Hyun WooJeun, MinhongChoi, JaewonLee, Kwan Hyi
Issue Date
2017-04
Publisher
DOVE MEDICAL PRESS LTD
Citation
INTERNATIONAL JOURNAL OF NANOMEDICINE, v.12, pp.2951 - 2956
Abstract
An ion-sensitive field-effect transistor ( ISFET) biosensor is thought to be the center of the next era of health diagnosis. However, questions are raised about its functions and reliability in liquid samples. Consequently, real-life clinical applications are few in number. In this study, we report a strategy to minimize the sensing signal drift error during bioanalyte detection in an ISFET biosensor. A nanoscale SnO2 thin film is used as a gate oxide layer (GOL), and the surface of the GOL is chemically modified for improving bioanalyte-specific binding and for reducing undesirable ion reactions in sample solutions. The ISFET biosensor with surface-modified GOL shows significantly reduced sensing signal error compared with an ISFET with bare GOL in both diluted and undiluted phosphate buffered saline solutions.
Keywords
FIELD-EFFECT TRANSISTOR; FIELD-EFFECT TRANSISTOR; extended gate; surface treatment; biosensor; SnO2; ISFET
ISSN
1176-9114
URI
https://pubs.kist.re.kr/handle/201004/122873
DOI
10.2147/IJN.S134441
Appears in Collections:
KIST Article > 2017
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE