Excimer laser annealing effects on AlGaN/GaN heterostructures

Authors
Lee, In HakJoo, Beom SooKim, Hyuk JinYun, Ye SeulJang, Seun YupKang, Min GyuKang, Chong YunPark, Byeong-GyuHan, MoonsupChang, Young Jun
Issue Date
2016-06
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v.16, no.6, pp.628 - 632
Abstract
We investigated impact of excimer laser annealing on the AlGaN/GaN heterojunction structures, where the 2-dimensional electron gas (2DEG) is formed. When applying homogeneous laser pulses at various laser densities, the electrical resistance of the 2DEG shows sudden increase along with sharp decrease of the carrier mobility and slight decrease of the carrier density. Especially, when applying laser density of 300 mJ/cm(2), we could obtain such jump of electrical resistance even after 2 min, i.e. 2400 pulses at 20 Hz. Low temperature photoluminescence and x-ray photoemission spectroscopy measurements show that the excimer laser annealing suppresses the coherent charge carriers and oxides the sample surface to form Ga2O. We estimate the activation energy of suppressing 2DEG to be 0.89 eV for the ELA process. We suggest that the excimer laser annealing has potential for gate oxide fabrication, surface passivation, and lateral pattering of 2DEG structures. (C) 2016 Elsevier B.V. All rights reserved.
Keywords
POWER ELECTRONICS APPLICATIONS; MG-DOPED GAN; POLARIZATION; IRRADIATION; SURFACE; LAYERS; FILMS; POWER ELECTRONICS APPLICATIONS; MG-DOPED GAN; POLARIZATION; IRRADIATION; SURFACE; LAYERS; FILMS; GaN; Laser annealing; Hall measurement; PL; XPS
ISSN
1567-1739
URI
https://pubs.kist.re.kr/handle/201004/124010
DOI
10.1016/j.cap.2016.03.013
Appears in Collections:
KIST Article > 2016
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