The "self spin valve" in oxygen stoichiometric SrRu1-xFexO3-delta epitaxial thin films

Authors
Toreh, Kirstie Raquel NataliaKim, Deok HyeonDash, UmasankarPhan, The-LongLee, Bo WhaJin, Hyun-WooLee, SuyounPark, Bae HoPark, Ji-YongCho, Myung RaePark, Yun DanielAcharya, Susant KumarYoo, WoosukJung, Myung-HwaJung, Chang Uk
Issue Date
2016-02-05
Publisher
ELSEVIER SCIENCE SA
Citation
JOURNAL OF ALLOYS AND COMPOUNDS, v.657, pp.224 - 230
Abstract
SrRu1-xFexO3-d (x = 0.00, 0.05, 0.10, and 0.20) thin films were fabricated to study the intrinsic aspects of a "self spin valve". Using epitaxial strain and high oxygen partial pressure during thin film growth, single phase thin films with negligible oxygen vacancies were successfully grown, and problems related to A-site disorder and grain boundaries were minimized. Under application of an external magnetic field of up to 9 T, the resistivity of all films decreased, resulting in large negative magnetoresistance (up to similar to 14.4%), which was stronger at temperatures in the range 10-30 K. An abrupt metal-insulator transition at T similar to 43 K was found in the x = 0.20 film, which was explained using a two-fluid model related to electron-electron interactions. From the model, two fitting parameters were found to be necessary for in-situ and homogenous defects, while three or unphysical fitting parameters were necessary for ex-situ and inhomogeneous defects. (C) 2015 Elsevier B.V. All rights reserved.
Keywords
MAGNETIC-PROPERTIES; MAGNETORESISTANCE; SRRUO3; TRANSITION; GROWTH; MAGNETIC-PROPERTIES; MAGNETORESISTANCE; SRRUO3; TRANSITION; GROWTH; Magnetoresistance; Self spin valve; A-site disorder; Grain boundary; Oxygen vacancies; Epitaxial thin film
ISSN
0925-8388
URI
https://pubs.kist.re.kr/handle/201004/124396
DOI
10.1016/j.jallcom.2015.10.084
Appears in Collections:
KIST Article > 2016
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