Thermoelectric Properties of Sn-Doped Bi0.4Sb1.6Te3 Thin Films

Abstract

The effect of Sn doping on the thermoelectric properties of p-type Bi0.4Sb1.6Te3 (BST) thin films was studied. Sn-doped BST films were grown on 4A degrees tilted GaAs (001) substrates by metal-organic chemical vapor deposition. To control the Sn ion concentration in the films, we systematically controlled the dose of the Sn precursor by varying the H-2 flow rate from 0 sccm to 100 sccm. The hole carrier concentration increased as the H-2 flow rate was increased. Interestingly, the Seebeck coefficient of the films simultaneously increased with the carrier concentration when the H-2 flow rate was increased up to 60 sccm. This might be attributed to the formation of virtual bound states in the valence band by Sn doping. Consequently, the Sn ion doping contributed to the thermopower enhancement of the BST films.