Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays

Authors
Shin, Hyun WookLee, Sang JunKim, Doo GunBae, Myung-HoHeo, JaeyeongChoi, Kyoung JinChoi, Won JunChoe, Jeong-wooShin, Jae Cheol
Issue Date
2015-06
Publisher
NATURE PUBLISHING GROUP
Citation
SCIENTIFIC REPORTS, v.5
Abstract
One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 mu m) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 mu m provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 x 10(8) cm.Hz(1/2)/W for the SWIR band at 77 K and operates at temperatures as high as 220 K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.
Keywords
SOLAR-CELLS; INTEGRATION; SILICON; SI(100); DEVICES; REGION; InAs Nano wire; SWIR; Si substrate
ISSN
2045-2322
URI
https://pubs.kist.re.kr/handle/201004/125407
DOI
10.1038/srep10764
Appears in Collections:
KIST Article > 2015
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE