Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays
- Authors
- Shin, Hyun Wook; Lee, Sang Jun; Kim, Doo Gun; Bae, Myung-Ho; Heo, Jaeyeong; Choi, Kyoung Jin; Choi, Won Jun; Choe, Jeong-woo; Shin, Jae Cheol
- Issue Date
- 2015-06
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- SCIENTIFIC REPORTS, v.5
- Abstract
- One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 mu m) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 mu m provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 x 10(8) cm.Hz(1/2)/W for the SWIR band at 77 K and operates at temperatures as high as 220 K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.
- Keywords
- SOLAR-CELLS; INTEGRATION; SILICON; SI(100); DEVICES; REGION; InAs Nano wire; SWIR; Si substrate
- ISSN
- 2045-2322
- URI
- https://pubs.kist.re.kr/handle/201004/125407
- DOI
- 10.1038/srep10764
- Appears in Collections:
- KIST Article > 2015
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