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dc.contributor.authorElsawy, Walaa-
dc.contributor.authorSon, Myungwoo-
dc.contributor.authorJang, Jisu-
dc.contributor.authorKim, Myung Jin-
dc.contributor.authorJi, Yongsung-
dc.contributor.authorKim, Tae-Wook-
dc.contributor.authorKo, Heung Cho-
dc.contributor.authorElbarbary, Ahmed-
dc.contributor.authorHam, Moon-Ho-
dc.contributor.authorLee, Jae-Suk-
dc.date.accessioned2024-01-20T07:33:38Z-
dc.date.available2024-01-20T07:33:38Z-
dc.date.created2021-09-04-
dc.date.issued2015-03-
dc.identifier.issn2161-1653-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/125737-
dc.description.abstractNonvolatile resistive memory devices based on a new low bandgap donor acceptor (D-A) conjugated polymer, poly((E)-6,6'-bis(2,3-dihydrothieno[3,4-b] [1,4] dioxine-5-y1) -1,1'-bis (2-octyldo decyl)-[3,3'-biindolinyi-dene3-2,2'-dione) (PIDED), which are fabricated and operated in ambient air, are reported. The D-A conjugated polymer is synthesized from 2,3dihydrothieno[3,4-b][1,4]dioxine and isoindigo as an electron donor and an electron acceptor, respectively, using CH-arylation polymerization. The devices show nonvolatile, unipolar resistive switching behaviors with a high on/off current ratio (similar to 10(4)), excellent endurance cycles (>200 cycles), and a long retention time (>10(4) s) in ambient air. These properties remain stable in ambient air over one year, demonstrating that the device performance is significantly unaffected by exposure to air as the isoindigo has strong electron-withdrawing character and the PIDED exhibits a high degree of crystallinity. This study may pave the way for use of practical nonvolatile organic memory devices operating in ambient air.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectRESISTIVE MEMORY-
dc.subjectTHIN-FILM-
dc.subjectPERFORMANCE-
dc.subjectINTEGRATION-
dc.subjectMECHANISM-
dc.subjectCOPOLYMER-
dc.titlelsoindigo-Based Donor-Acceptor Conjugated Polymers for Air-Stable Nonvolatile Memory Devices-
dc.typeArticle-
dc.identifier.doi10.1021/mz500698p-
dc.description.journalClass1-
dc.identifier.bibliographicCitationACS MACRO LETTERS, v.4, no.3, pp.322 - 326-
dc.citation.titleACS MACRO LETTERS-
dc.citation.volume4-
dc.citation.number3-
dc.citation.startPage322-
dc.citation.endPage326-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000351326100012-
dc.identifier.scopusid2-s2.0-84925002854-
dc.relation.journalWebOfScienceCategoryPolymer Science-
dc.relation.journalResearchAreaPolymer Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusRESISTIVE MEMORY-
dc.subject.keywordPlusTHIN-FILM-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusINTEGRATION-
dc.subject.keywordPlusMECHANISM-
dc.subject.keywordPlusCOPOLYMER-
dc.subject.keywordAuthorOrganic memory-
dc.subject.keywordAuthorconjugated polymer-
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