Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Shon, Yoon | - |
dc.contributor.author | Lee, J. W. | - |
dc.contributor.author | Lee, D. J. | - |
dc.contributor.author | Yoon, I. T. | - |
dc.contributor.author | Kwon, Y. H. | - |
dc.contributor.author | Kim, H. S. | - |
dc.contributor.author | Kang, T. W. | - |
dc.contributor.author | Kyhm, J. H. | - |
dc.contributor.author | Song, J. D. | - |
dc.contributor.author | Koo, H. C. | - |
dc.contributor.author | Fu, D. J. | - |
dc.contributor.author | Park, C. S. | - |
dc.contributor.author | An, H. H. | - |
dc.contributor.author | Yoon, Chong S. | - |
dc.contributor.author | Kim, E. K. | - |
dc.date.accessioned | 2024-01-20T09:00:27Z | - |
dc.date.available | 2024-01-20T09:00:27Z | - |
dc.date.created | 2021-09-02 | - |
dc.date.issued | 2014-10 | - |
dc.identifier.issn | 0022-2313 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/126310 | - |
dc.description.abstract | InCrP:Zn was prepared using the implantation with Cr concentrations of 0.3% and 0.7%, respectively. It was confirmed that the photoluminescence peaks near 0.85(D, Cr) eV and 0.96(e,Cr) eV were Cr-correlated PL bands by the implantation of Cr. Especially, each 0.85(D, Cr) eV and 0.96(e,Cr) eV peaks were separately observed based on InP. In triple-axis x-ray diffraction patterns, the samples revealed a shoulder peak indicative of intrinsic InCrP. Ferromagnetic hysteresis loops measured at 10 K and 300 K were observed and the temperature-dependent magnetization showed ferromagnetic behavior >= 300 K, which reveals obvious and enhanced ferromagnetic spin coupling mediated by hole. (C) 2014 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | INP | - |
dc.subject | GAAS | - |
dc.subject | MN | - |
dc.title | New optical transition, structural, and ferromagnetic properties of InCrP:Zn implanted with Cr | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.jlumin.2014.06.011 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF LUMINESCENCE, v.154, pp.593 - 596 | - |
dc.citation.title | JOURNAL OF LUMINESCENCE | - |
dc.citation.volume | 154 | - |
dc.citation.startPage | 593 | - |
dc.citation.endPage | 596 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000340687600093 | - |
dc.identifier.scopusid | 2-s2.0-84903695210 | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalResearchArea | Optics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | INP | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | MN | - |
dc.subject.keywordAuthor | Photoluminescence | - |
dc.subject.keywordAuthor | Cr-implantation | - |
dc.subject.keywordAuthor | P-type InCrP:Zn | - |
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