New optical transition, structural, and ferromagnetic properties of InCrP:Zn implanted with Cr
- Authors
- Shon, Yoon; Lee, J. W.; Lee, D. J.; Yoon, I. T.; Kwon, Y. H.; Kim, H. S.; Kang, T. W.; Kyhm, J. H.; Song, J. D.; Koo, H. C.; Fu, D. J.; Park, C. S.; An, H. H.; Yoon, Chong S.; Kim, E. K.
- Issue Date
- 2014-10
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- JOURNAL OF LUMINESCENCE, v.154, pp.593 - 596
- Abstract
- InCrP:Zn was prepared using the implantation with Cr concentrations of 0.3% and 0.7%, respectively. It was confirmed that the photoluminescence peaks near 0.85(D, Cr) eV and 0.96(e,Cr) eV were Cr-correlated PL bands by the implantation of Cr. Especially, each 0.85(D, Cr) eV and 0.96(e,Cr) eV peaks were separately observed based on InP. In triple-axis x-ray diffraction patterns, the samples revealed a shoulder peak indicative of intrinsic InCrP. Ferromagnetic hysteresis loops measured at 10 K and 300 K were observed and the temperature-dependent magnetization showed ferromagnetic behavior >= 300 K, which reveals obvious and enhanced ferromagnetic spin coupling mediated by hole. (C) 2014 Elsevier B.V. All rights reserved.
- Keywords
- SEMICONDUCTORS; INP; GAAS; MN; SEMICONDUCTORS; INP; GAAS; MN; Photoluminescence; Cr-implantation; P-type InCrP:Zn
- ISSN
- 0022-2313
- URI
- https://pubs.kist.re.kr/handle/201004/126310
- DOI
- 10.1016/j.jlumin.2014.06.011
- Appears in Collections:
- KIST Article > 2014
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