Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film using BCl3 and Ar neutral beam

Authors
Jhon, Young I.Min, Kyung S.Yeom, G. Y.Jhon, Young Min
Issue Date
2014-09-01
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.105, no.9
Abstract
We scrutinize time-resolved processes occurring in atomic-layer etching (ALET) of ultra-thin Al2O3 film using BCl3 gas and Ar neutral beam by employing density functional theory calculations and experimental measurements. BCl3 gas is found to be preferentially chemisorbed on Al2O3(100) in trans form with the surface atoms creating O-B and Al-Cl contacts. We disclose that the most likely sequence of etching events involves dominant detachment of Al-associated moieties at early etching stages in good agreement with our concurrent experiments on tracking Al2O3 surface compositional variations during Ar bombardment. In this etching regime, we find that ALET requires half the maximum reaction energy of conventional plasma etching, which greatly increases if the etching sequence changes. (C) 2014 AIP Publishing LLC.
Keywords
ION-BOMBARDMENT; MOS DEVICES; LOW-ANGLE; SIMULATION; EVOLUTION; DYNAMICS; SILICON; DAMAGE; SURFACES; MODEL; ION-BOMBARDMENT; MOS DEVICES; LOW-ANGLE; SIMULATION; EVOLUTION; DYNAMICS; SILICON; DAMAGE; SURFACES; MODEL; Atomic-layer etching; Al2O3; Time-resolved process
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/126367
DOI
10.1063/1.4894523
Appears in Collections:
KIST Article > 2014
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