Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Ki-Young | - |
dc.contributor.author | Kim, Ilsoo | - |
dc.contributor.author | Kim, So-Eun | - |
dc.contributor.author | Jeong, Du-Won | - |
dc.contributor.author | Kim, Ju-Jin | - |
dc.contributor.author | Rhim, Hyewhon | - |
dc.contributor.author | Ahn, Jae-Pyeong | - |
dc.contributor.author | Park, Seung-Han | - |
dc.contributor.author | Choi, Heon-Jin | - |
dc.date.accessioned | 2024-01-20T10:31:32Z | - |
dc.date.available | 2024-01-20T10:31:32Z | - |
dc.date.created | 2021-09-04 | - |
dc.date.issued | 2014-02-03 | - |
dc.identifier.issn | 1931-7573 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/127111 | - |
dc.description.abstract | The single living cell action potential was measured in an intracellular mode by using a vertical nanoelectrode. For intracellular interfacing, Si nanowires were vertically grown in a controlled manner, and optimum conditions, such as diameter, length, and nanowire density, were determined by culturing cells on the nanowires. Vertical nanowire probes were then fabricated with a complimentary metal-oxide-semiconductor (CMOS) process including sequential deposition of the passivation and electrode layers on the nanowires, and a subsequent partial etching process. The fabricated nanowire probes had an approximately 60-nm diameter and were intracellular. These probes interfaced with a GH(3) cell and measured the spontaneous action potential. It successfully measured the action potential, which rapidly reached a steady state with average peak amplitude of approximately 10 mV, duration of approximately 140 ms, and period of 0.9 Hz. | - |
dc.language | English | - |
dc.publisher | SPRINGEROPEN | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | CONTROLLED GROWTH | - |
dc.subject | SILICON CHIP | - |
dc.subject | NERVE-CELLS | - |
dc.subject | NEURONS | - |
dc.subject | ARRAYS | - |
dc.subject | DEVICE | - |
dc.subject | NETWORKS | - |
dc.title | Vertical nanowire probes for intracellular signaling of living cells | - |
dc.type | Article | - |
dc.identifier.doi | 10.1186/1556-276X-9-56 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | NANOSCALE RESEARCH LETTERS, v.9 | - |
dc.citation.title | NANOSCALE RESEARCH LETTERS | - |
dc.citation.volume | 9 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000331634100001 | - |
dc.identifier.scopusid | 2-s2.0-84897750896 | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | CONTROLLED GROWTH | - |
dc.subject.keywordPlus | SILICON CHIP | - |
dc.subject.keywordPlus | NERVE-CELLS | - |
dc.subject.keywordPlus | NEURONS | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | NETWORKS | - |
dc.subject.keywordAuthor | Silicon nanowire | - |
dc.subject.keywordAuthor | Intracellular interfacing | - |
dc.subject.keywordAuthor | Living cell | - |
dc.subject.keywordAuthor | Nanowire probe | - |
dc.subject.keywordAuthor | Action potential | - |
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