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dc.contributor.authorLee, Ki-Young-
dc.contributor.authorKim, Ilsoo-
dc.contributor.authorKim, So-Eun-
dc.contributor.authorJeong, Du-Won-
dc.contributor.authorKim, Ju-Jin-
dc.contributor.authorRhim, Hyewhon-
dc.contributor.authorAhn, Jae-Pyeong-
dc.contributor.authorPark, Seung-Han-
dc.contributor.authorChoi, Heon-Jin-
dc.date.accessioned2024-01-20T10:31:32Z-
dc.date.available2024-01-20T10:31:32Z-
dc.date.created2021-09-04-
dc.date.issued2014-02-03-
dc.identifier.issn1931-7573-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/127111-
dc.description.abstractThe single living cell action potential was measured in an intracellular mode by using a vertical nanoelectrode. For intracellular interfacing, Si nanowires were vertically grown in a controlled manner, and optimum conditions, such as diameter, length, and nanowire density, were determined by culturing cells on the nanowires. Vertical nanowire probes were then fabricated with a complimentary metal-oxide-semiconductor (CMOS) process including sequential deposition of the passivation and electrode layers on the nanowires, and a subsequent partial etching process. The fabricated nanowire probes had an approximately 60-nm diameter and were intracellular. These probes interfaced with a GH(3) cell and measured the spontaneous action potential. It successfully measured the action potential, which rapidly reached a steady state with average peak amplitude of approximately 10 mV, duration of approximately 140 ms, and period of 0.9 Hz.-
dc.languageEnglish-
dc.publisherSPRINGEROPEN-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectCONTROLLED GROWTH-
dc.subjectSILICON CHIP-
dc.subjectNERVE-CELLS-
dc.subjectNEURONS-
dc.subjectARRAYS-
dc.subjectDEVICE-
dc.subjectNETWORKS-
dc.titleVertical nanowire probes for intracellular signaling of living cells-
dc.typeArticle-
dc.identifier.doi10.1186/1556-276X-9-56-
dc.description.journalClass1-
dc.identifier.bibliographicCitationNANOSCALE RESEARCH LETTERS, v.9-
dc.citation.titleNANOSCALE RESEARCH LETTERS-
dc.citation.volume9-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000331634100001-
dc.identifier.scopusid2-s2.0-84897750896-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusCONTROLLED GROWTH-
dc.subject.keywordPlusSILICON CHIP-
dc.subject.keywordPlusNERVE-CELLS-
dc.subject.keywordPlusNEURONS-
dc.subject.keywordPlusARRAYS-
dc.subject.keywordPlusDEVICE-
dc.subject.keywordPlusNETWORKS-
dc.subject.keywordAuthorSilicon nanowire-
dc.subject.keywordAuthorIntracellular interfacing-
dc.subject.keywordAuthorLiving cell-
dc.subject.keywordAuthorNanowire probe-
dc.subject.keywordAuthorAction potential-
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KIST Article > 2014
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