Vertical nanowire probes for intracellular signaling of living cells

Authors
Lee, Ki-YoungKim, IlsooKim, So-EunJeong, Du-WonKim, Ju-JinRhim, HyewhonAhn, Jae-PyeongPark, Seung-HanChoi, Heon-Jin
Issue Date
2014-02-03
Publisher
SPRINGEROPEN
Citation
NANOSCALE RESEARCH LETTERS, v.9
Abstract
The single living cell action potential was measured in an intracellular mode by using a vertical nanoelectrode. For intracellular interfacing, Si nanowires were vertically grown in a controlled manner, and optimum conditions, such as diameter, length, and nanowire density, were determined by culturing cells on the nanowires. Vertical nanowire probes were then fabricated with a complimentary metal-oxide-semiconductor (CMOS) process including sequential deposition of the passivation and electrode layers on the nanowires, and a subsequent partial etching process. The fabricated nanowire probes had an approximately 60-nm diameter and were intracellular. These probes interfaced with a GH(3) cell and measured the spontaneous action potential. It successfully measured the action potential, which rapidly reached a steady state with average peak amplitude of approximately 10 mV, duration of approximately 140 ms, and period of 0.9 Hz.
Keywords
FIELD-EFFECT TRANSISTORS; CONTROLLED GROWTH; SILICON CHIP; NERVE-CELLS; NEURONS; ARRAYS; DEVICE; NETWORKS; FIELD-EFFECT TRANSISTORS; CONTROLLED GROWTH; SILICON CHIP; NERVE-CELLS; NEURONS; ARRAYS; DEVICE; NETWORKS; Silicon nanowire; Intracellular interfacing; Living cell; Nanowire probe; Action potential
ISSN
1931-7573
URI
https://pubs.kist.re.kr/handle/201004/127111
DOI
10.1186/1556-276X-9-56
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KIST Article > 2014
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