Optimization of Temperature-Mediated Organic Semiconducting Crystals on Soft Polymer-Treated Gate Dielectrics

Authors
Jang, MiBaek, Kyung YoulYang, Hoichang
Issue Date
2013-12-05
Publisher
American Chemical Society
Citation
The Journal of Physical Chemistry C, v.117, no.48, pp.25290 - 25297
Abstract
The temperature-mediated crystal structures of N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) on organo-compatible polymer/ SiO2 bilayer dielectrics, including either physisorbed or grafted polystyrenes (PSs), were examined and correlated with their electrical characteristics in organic field-effect transistors (OFETs). The crystallinity of the PTCDI-C13 films on these dielectrics increased with increasing annealing temperature (T-A), but the semiconductor-dielectric interfaces were also changed depending on the surface properties of the polymeric dielectrics. When T-A was increased above the glass transition temperature of PSs, the 20-30 nm thick physisorbed PS layers became softened and further dewetted from the oxide surfaces, resulting in the subsidence and disconnection of PTCDI-C13 crystal grains into the undulated PS layers. In contrast, the PS monolayer grafted to the SiO2 surface could maintain a wetting layer even at T-A = 200 degrees C, resulting in a hydroxyl free dielectric surface and highly pi-conjugated structures of T-A-mediated PTCDI-C13 crystals to achieve high-performance OFETs (field-effect mobility up to 0.2 cm(2) V-1 s(-1), threshold voltage similar to 1.0 V, on-off current ratio >10(6), and no gate sweep hysteresis).
Keywords
FIELD-EFFECT TRANSISTORS; GLASS-TRANSITION TEMPERATURE; SOLAR-CELLS; PERFORMANCE; FILMS; ELECTRONICS; STABILITY; INVERTERS; DEVICES; FIELD-EFFECT TRANSISTORS; GLASS-TRANSITION TEMPERATURE; SOLAR-CELLS; PERFORMANCE; FILMS; ELECTRONICS; STABILITY; INVERTERS; DEVICES
ISSN
1932-7447
URI
https://pubs.kist.re.kr/handle/201004/127340
DOI
10.1021/jp408097p
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KIST Article > 2013
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