Dielectric functions of In-1 (-) xAlxSb alloys for arbitrary compositions with parametric modeling

Authors
Diware, Mangesh S.Kim, Tae JungYoon, Jae JinBarange, Nilesh S.Byun, Jun SeokPark, Han GyeolKim, Young DongShin, Sang HoonSong, Jin Dong
Issue Date
2013-11-01
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.546, pp.26 - 30
Abstract
By determining the parameters of the parametric model (PM) for selected Al compositions x of In-1 (-) xAlxSb, we provide the information needed to accurately calculate the room-temperature dielectric functions epsilon = epsilon(1) + i epsilon(2) of these alloys from 1.5 to 6.0 eV as a continuous function of x over the entire composition range 0 <= x <= 1. Our parameters are determined from data obtained by spectroscopic ellipsometry for Al compositions x = 0.00, 0.142, 0.341, 0.539, 0.754, and 1.00. The PM dielectric functions are found to be in excellent agreement with the data. These results will be useful in many aspects of research and technology. (c) 2013 Elsevier B.V. All rights reserved.
Keywords
ELECTRON-MOBILITY TRANSISTORS; V COMPOUND SEMICONDUCTORS; FILMS; INAS; GAAS; INSB; INP; GE; SI; ELECTRON-MOBILITY TRANSISTORS; V COMPOUND SEMICONDUCTORS; FILMS; INAS; GAAS; INSB; INP; GE; SI; Ellipsometry; In-1 (-) xAlxSb; Dielectric function; Parametric model
ISSN
0040-6090
URI
https://pubs.kist.re.kr/handle/201004/127453
DOI
10.1016/j.tsf.2013.04.075
Appears in Collections:
KIST Article > 2013
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