Magnetotransport properties of dual MgO barrier magnetic tunnel junctions consisting of CoFeB/FeNiSiB/CoFeB free layers

Authors
Kim, D. K.Cho, J. U.Chun, B. S.Shin, K. H.Lee, K. J.Tsunoda, M.Takahashi, M.Kim, Y. K.
Issue Date
2012-12-03
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.101, no.23
Abstract
We report the transport properties of a dual MgO barrier magnetic tunnel junction (DMTJ) where a FeNiSiB layer was inserted in a CoFeB free layer. Upon post-deposition annealing at 330 degrees C, the tunneling magnetoresistance (TMR) ratio of the DMTJ with a hybrid CoFeB/FeNiSiB/CoFeB free layer reached 195% which is higher than the TMR ratio of 121% from the DMTJ with the single CoFeB free layer. The bias voltage dependence profile was more symmetric for the hybrid case. Boron depth profiling result suggests that the FeNiSiB layer dragged boron atoms more to it rather than letting them diffuse toward CoFeB/MgO interfaces, resulting in improved MTJ performances. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768931]
Keywords
CRYSTALLIZATION; CRYSTALLIZATION
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/128560
DOI
10.1063/1.4768931
Appears in Collections:
KIST Article > 2012
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