One-Dimensional TiO2@Ag Nanoarchitectures with Interface-Mediated Implementation of Resistance-Switching Behavior in Polymer Nanocomposites
- Authors
- Oh, Kiwon; Jeon, Woojin; Lee, Sang-Soo
- Issue Date
- 2012-11
- Publisher
- American Chemical Society
- Citation
- ACS Applied Materials & Interfaces, v.4, no.11, pp.5727 - 5731
- Abstract
- A nanocomposite capable of showing a resistance-switching behavior is prepared using novel resistance-switchable fillers embedded in a polymer matrix. The filler in this study employs a conformal passivation layer of highly crystalline TiO2 on surfaces of conductive Ag nanowires to effectively gate electron flows delivered through the conductive core, resulting in an excellent resistance-switching performance. A nanocomposite prepared by controlled mixing of the resistance-switchable nanowires with a polymer matrix successfully exhibited a resistance-switching behavior of highly enhanced reliability and a resistance on/off ratio, along with flexibility due to the presence of nanowires of a tiny amount. The advantages of our approach include a simple and low-cost fabrication procedure along with sustainable performances suitable for a resistance-switching random-access-memory application.
- Keywords
- MEMORY; OXIDE; MEMORY; OXIDE; resistance-switching random access memory; conductive nanowires; passivation; nanocomposites
- ISSN
- 1944-8244
- URI
- https://pubs.kist.re.kr/handle/201004/128704
- DOI
- 10.1021/am301362f
- Appears in Collections:
- KIST Article > 2012
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