One-Dimensional TiO2@Ag Nanoarchitectures with Interface-Mediated Implementation of Resistance-Switching Behavior in Polymer Nanocomposites

Authors
Oh, KiwonJeon, WoojinLee, Sang-Soo
Issue Date
2012-11
Publisher
American Chemical Society
Citation
ACS Applied Materials & Interfaces, v.4, no.11, pp.5727 - 5731
Abstract
A nanocomposite capable of showing a resistance-switching behavior is prepared using novel resistance-switchable fillers embedded in a polymer matrix. The filler in this study employs a conformal passivation layer of highly crystalline TiO2 on surfaces of conductive Ag nanowires to effectively gate electron flows delivered through the conductive core, resulting in an excellent resistance-switching performance. A nanocomposite prepared by controlled mixing of the resistance-switchable nanowires with a polymer matrix successfully exhibited a resistance-switching behavior of highly enhanced reliability and a resistance on/off ratio, along with flexibility due to the presence of nanowires of a tiny amount. The advantages of our approach include a simple and low-cost fabrication procedure along with sustainable performances suitable for a resistance-switching random-access-memory application.
Keywords
MEMORY; OXIDE; MEMORY; OXIDE; resistance-switching random access memory; conductive nanowires; passivation; nanocomposites
ISSN
1944-8244
URI
https://pubs.kist.re.kr/handle/201004/128704
DOI
10.1021/am301362f
Appears in Collections:
KIST Article > 2012
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE