Complementary photo and temperature cured polymer dielectrics with high-quality dielectric properties for organic semiconductors
- Authors
- Kim, Se Hyun; Jang, Mi; Kim, Jiye; Choi, Harim; Baek, Kyung-Youl; Park, Chan Eon; Yang, Hoichang
- Issue Date
- 2012-10
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY, v.22, no.37, pp.19940 - 19947
- Abstract
- Photo and temperature cured polymer dielectrics could be fabricated on a gate-patterned glass, with two immiscible polymer precursors, divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB precursor) and poly(melamine-co-formaldehyde)acrylate (PMFA), which have excellent insulating properties, but show discernible dielectric constants and polarities. On hydrophobic BCB-assisted PMFA blend dielectrics (approximately 400 nm thick), organic field-effect transistors (OFET) and complementary inverters were demonstrated using pentacene and N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) as semiconducting channels. The values of field-effect mobilities showed up to 0.33 cm(2) V-1 s(-1) (for pentacene) and 0.85 cm(2) V-1 s(-1) (for PTCDI-C13), respectively. In addition, these based complementary inverter was successfully demonstrated with a high voltage gain of ca. 41, specifically, onto the 10 wt% BCB-assisted PMFA dielectric optimized to achieve a hydrophobic and smooth surface by vertically phase-separating the immiscible polymers.
- Keywords
- FIELD-EFFECT TRANSISTORS; PENTACENE THIN-FILMS; GATE-DIELECTRICS; SURFACE-ENERGY; PERFORMANCE; NANOSTRUCTURES; MORPHOLOGY; STABILITY; TRANSPORT; ELECTRON; FIELD-EFFECT TRANSISTORS; PENTACENE THIN-FILMS; GATE-DIELECTRICS; SURFACE-ENERGY; PERFORMANCE; NANOSTRUCTURES; MORPHOLOGY; STABILITY; TRANSPORT; ELECTRON; OTFT
- ISSN
- 0959-9428
- URI
- https://pubs.kist.re.kr/handle/201004/128815
- DOI
- 10.1039/c2jm33203e
- Appears in Collections:
- KIST Article > 2012
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