Complementary photo and temperature cured polymer dielectrics with high-quality dielectric properties for organic semiconductors

Authors
Kim, Se HyunJang, MiKim, JiyeChoi, HarimBaek, Kyung-YoulPark, Chan EonYang, Hoichang
Issue Date
2012-10
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY, v.22, no.37, pp.19940 - 19947
Abstract
Photo and temperature cured polymer dielectrics could be fabricated on a gate-patterned glass, with two immiscible polymer precursors, divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB precursor) and poly(melamine-co-formaldehyde)acrylate (PMFA), which have excellent insulating properties, but show discernible dielectric constants and polarities. On hydrophobic BCB-assisted PMFA blend dielectrics (approximately 400 nm thick), organic field-effect transistors (OFET) and complementary inverters were demonstrated using pentacene and N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) as semiconducting channels. The values of field-effect mobilities showed up to 0.33 cm(2) V-1 s(-1) (for pentacene) and 0.85 cm(2) V-1 s(-1) (for PTCDI-C13), respectively. In addition, these based complementary inverter was successfully demonstrated with a high voltage gain of ca. 41, specifically, onto the 10 wt% BCB-assisted PMFA dielectric optimized to achieve a hydrophobic and smooth surface by vertically phase-separating the immiscible polymers.
Keywords
FIELD-EFFECT TRANSISTORS; PENTACENE THIN-FILMS; GATE-DIELECTRICS; SURFACE-ENERGY; PERFORMANCE; NANOSTRUCTURES; MORPHOLOGY; STABILITY; TRANSPORT; ELECTRON; FIELD-EFFECT TRANSISTORS; PENTACENE THIN-FILMS; GATE-DIELECTRICS; SURFACE-ENERGY; PERFORMANCE; NANOSTRUCTURES; MORPHOLOGY; STABILITY; TRANSPORT; ELECTRON; OTFT
ISSN
0959-9428
URI
https://pubs.kist.re.kr/handle/201004/128815
DOI
10.1039/c2jm33203e
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KIST Article > 2012
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