DSpace at KISTKIST Article2012

CdS buffer-layer free highly efficient ZnO-CdSe photoelectrochemical cells

Authors
Mane, Rajaram S.; Shinde, Dipak V.; Yoon, Seog Joon; Ambade, Swapnil B.; Lee, Joong Kee; Han, Sung-Hwan
Issue Date
2012-07-16
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.101, no.3
Abstract
Highly reproducible, wet-chemically processed, CdS buffer-layer free ZnO-CdSe photoelectrochemical cells with 3.38% power conversion efficiency have been fabricated. An enhanced current density is observed due to increase in number of injected photoelectrons with CdSe nanoparticles loading time. Impedance spectroscopy results suggest that interfacial resistance is strongly dependant on CdSe nanoparticles loading time. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737865]
Keywords
SENSITIZED SOLAR-CELLS; NANOWIRE ARRAYS; PHOTOSENSITIZATION; NANOPARTICLES; GROWTH; FILMS; SENSITIZED SOLAR-CELLS; NANOWIRE ARRAYS; PHOTOSENSITIZATION; NANOPARTICLES; GROWTH; FILMS; photoelectrochemical cells; ZnO-CdSe; CdS buffer-layer; CdSe nanoparticles
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/129060
DOI
10.1063/1.4737865
Appears in Collections:
KIST Article > 2012
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML
Show Full Item Record

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE