Bipolar Resistive Switching Behavior of a Pt/NiO/TiN Device for Nonvolatile Memory Applications

Authors
Seong, Tae-GeunJoung, Mi-RiSun, Jong-WooYang, Min KyuLee, Jeon-KookMoon, Ji WonRoh, JaesungNahm, Sahn
Issue Date
2012-04
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.4
Abstract
Bipolar resistive switching behavior was observed in a Pt/NiO/TiN device. The device exhibited switching behavior that was stable over 100 cycles and did not degrade after 10(4) s. An electroforming process was required to obtain these bipolar resistive switching properties, and the conduction behavior of the low resistance state followed Ohm's law, indicating that conductive filaments formed during the electroforming process. The conductive filaments consisted of oxygen vacancies and the Pt electrode behaved as an oxygen reservoir. The bipolar resistive switching of the Pt/NiO/TiN device was explained by the generation and annihilation of oxygen vacancies in the filaments. (C) 2012 The Japan Society of Applied Physics
Keywords
NIO FILMS; OXIDE; ELECTRODE; NIO FILMS; OXIDE; ELECTRODE; NIO FILMS; OXIDE; ELECTRODE
ISSN
0021-4922
URI
https://pubs.kist.re.kr/handle/201004/129399
DOI
10.1143/JJAP.51.041102
Appears in Collections:
KIST Article > 2012
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