Perturbation of the Electron Transport Mechanism by Proton Intercalation in Nanoporous TiO2 Films
- Authors
- Halverson, Adam F.; Zhu, Kai; Erslev, Peter T.; Kim, Jin Young; Neale, Nathan R.; Frank, Arthur J.
- Issue Date
- 2012-04
- Publisher
- AMER CHEMICAL SOC
- Citation
- NANO LETTERS, v.12, no.4, pp.2112 - 2116
- Abstract
- This study addresses a long-standing controversy about the electron-transport mechanism in porous metal oxide semiconductor films that are commonly used in dye-sensitized solar cells and related systems. We investigated, by temperature-dependent time-of-flight measurements, the influence of proton intercalation on the electron-transport properties of nanoporous TiO2 films exposed to an ethanol electrolyte containing different percentages of water (0-10%). These measurements revealed that increasing the water content in the electrolyte led to increased proton intercalation into the TiO2 films, slower transport, and a dramatic change in the dependence of the thermal activation energy (E-a) of the electron diffusion coefficient on the photogenerated electron density in the films. Random walk simulations based on a microscopic model incorporating exponential conduction band tail (CBT) trap states combined with a proton-induced shallow trap level with a long residence time accounted for the observed effects of proton intercalation on E-a. Application of this model to the experimental results explains the conditions under which E-a dependence on the photoelectron density is consistent with multiple trapping in exponential CBT states and under which it appears at variance with this model.
- Keywords
- SENSITIZED SOLAR-CELLS; NANOSTRUCTURED TIO2; PHOTOVOLTAIC PROPERTIES; ACTIVATION-ENERGIES; HYDROGEN; RECOMBINATION; EDGE; BAND; TEMPERATURE; INSULATORS; SENSITIZED SOLAR-CELLS; NANOSTRUCTURED TIO2; PHOTOVOLTAIC PROPERTIES; ACTIVATION-ENERGIES; HYDROGEN; RECOMBINATION; EDGE; BAND; TEMPERATURE; INSULATORS; Proton intercalation; nanoporous TiO2 films; electron transport; activation energy; time-of-flight; random walk simulation
- ISSN
- 1530-6984
- URI
- https://pubs.kist.re.kr/handle/201004/129419
- DOI
- 10.1021/nl300399w
- Appears in Collections:
- KIST Article > 2012
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