Low-Temperature Crystallization of Sol-Gel Derived PbZr0.52Ti0.48O3 Thin Films with a Vanadium Additive

Authors
Kang, Min-GyuOh, Seung-MinCho, Kwang-HwanDo, Young-HoPaik, Dong-SooCho, Bong-HeeKang, Chong-YunNahm, SahnYoon, Seok-Jin
Issue Date
2012-01
Publisher
ELECTROCHEMICAL SOC INC
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.159, no.1, pp.D9 - D12
Abstract
Low-temperature-crystallized PbZr0.52Ti0.48O3 (PZT) thin films, prepared using a sol-gel method, with a vanadium additive are demonstrated. The low crystallization and melting temperatures of vanadium oxide helped to reduce the crystallization temperature, and improved the grain growth in PZT thin films. Perovskite PZT thin films were obtained at a low annealing temperature of 450 degrees C, and remarkable electrical properties such as a remnant polarization of 4.3 mu C/cm(2), a coercive field of 49.3 kV/cm, a dielectric constant of 585 at 1 MHz, a dielectric loss of 0.022 at 1 MHz, and a tunability of 64.5% were observed. The present results suggest that these low-temperature-crystallized PZT thin films could be used for integrated ferroelectric device applications. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.018201jes]
Keywords
Low-Temperature; PZT; Vanadium; thin film
ISSN
0013-4651
URI
https://pubs.kist.re.kr/handle/201004/129691
DOI
10.1149/2.018201jes
Appears in Collections:
KIST Article > 2012
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