Junction Temperature Simulation of In As Quantum dot Laser Diodes for High Optical Power

Abstract

Junction temperature of In As quantum-dot laser diodes (LDs) with different geometric dimensions is analyzed by using a finite-element method for the purpose of high-optical-power application. In particular, we found that the junction temperature of LDs epi-up mounted on a Cu sub-mount changed significantly depending on the LD chip width. The junction temperature at 1.5 W in the CW mode was reduced from about 500 K to 350 K when the LD chip width was widened from 50 mu m to 500 mu m.