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dc.contributor.authorKim, Byung-Hyun-
dc.contributor.authorPamungkas, Mauludi Ariesto-
dc.contributor.authorPark, Mina-
dc.contributor.authorKim, Gyubong-
dc.contributor.authorLee, Kwang-Ryeol-
dc.contributor.authorChung, Yong-Chae-
dc.date.accessioned2024-01-20T16:03:48Z-
dc.date.available2024-01-20T16:03:48Z-
dc.date.created2021-09-04-
dc.date.issued2011-10-03-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/129899-
dc.description.abstractUsing a reactive molecular dynamics simulation, the oxidation of Si nanowires (Si-NWs) with diameters of 5, 10, and 20 nm was investigated. The compressive stress at the interface between the oxide and the Si core decreased with increasing curvature in the sub-10 nm regime of the diameter, in contrast to the theory of self-limiting oxidation where rigid mechanical constraint of the Si core was assumed. The Si core of the thinner Si-NW was deformed more with surface oxidation, resulting in a lower compressive stress at the interface. These results explain the experimental observation of full oxidation of very thin Si-NWs. (C) 2011 American Institute of Physics. [doi:10,1063/1.3643038]-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectSELF-LIMITING OXIDATION-
dc.subjectSI NANOWIRES-
dc.subjectPARTICLES-
dc.titleStress evolution during the oxidation of silicon nanowires in the sub-10 nm diameter regime-
dc.typeArticle-
dc.identifier.doi10.1063/1.3643038-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.99, no.14-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume99-
dc.citation.number14-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000295625100081-
dc.identifier.scopusid2-s2.0-80053988759-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusSELF-LIMITING OXIDATION-
dc.subject.keywordPlusSI NANOWIRES-
dc.subject.keywordPlusPARTICLES-
dc.subject.keywordAuthorcompressive strength-
dc.subject.keywordAuthordeformation-
dc.subject.keywordAuthorelemental semiconductors-
dc.subject.keywordAuthorinternal stresses-
dc.subject.keywordAuthormolecular dynamics method-
dc.subject.keywordAuthornanowires-
dc.subject.keywordAuthoroxidation-
dc.subject.keywordAuthorshear modulus-
dc.subject.keywordAuthorsilicon-
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