Stress evolution during the oxidation of silicon nanowires in the sub-10 nm diameter regime

Authors
Kim, Byung-HyunPamungkas, Mauludi AriestoPark, MinaKim, GyubongLee, Kwang-RyeolChung, Yong-Chae
Issue Date
2011-10-03
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.99, no.14
Abstract
Using a reactive molecular dynamics simulation, the oxidation of Si nanowires (Si-NWs) with diameters of 5, 10, and 20 nm was investigated. The compressive stress at the interface between the oxide and the Si core decreased with increasing curvature in the sub-10 nm regime of the diameter, in contrast to the theory of self-limiting oxidation where rigid mechanical constraint of the Si core was assumed. The Si core of the thinner Si-NW was deformed more with surface oxidation, resulting in a lower compressive stress at the interface. These results explain the experimental observation of full oxidation of very thin Si-NWs. (C) 2011 American Institute of Physics. [doi:10,1063/1.3643038]
Keywords
SELF-LIMITING OXIDATION; SI NANOWIRES; PARTICLES; SELF-LIMITING OXIDATION; SI NANOWIRES; PARTICLES; compressive strength; deformation; elemental semiconductors; internal stresses; molecular dynamics method; nanowires; oxidation; shear modulus; silicon
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/129899
DOI
10.1063/1.3643038
Appears in Collections:
KIST Article > 2011
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