DSpace at KISTKIST Article2011

Resistance switching of heteroepitaxial Cr-doped SrZrO3 thin films

Authors
Yang, Min Kyu; Park, Jae-Wan; Lee, Jeon-Kook
Issue Date
2011-08
Publisher
KOREAN INST METALS MATERIALS
Citation
METALS AND MATERIALS INTERNATIONAL, v.17, no.4, pp.637 - 640
Abstract
Heteroepitaxial Cr-doped SrZrO3 thin films were grown on 200 nm-thick SrRuO3 films deposited on SrTiO3 (100) substrates by pulsed laser deposition. The Cr-doped SrZrO3 films on the SrRuO3 bottom electrode exhibited an XRD peak for the (hh0/00l) planes of SrZrO3 and SrRuO3 thin films, showing a good epitaxial relationship. The I-V characteristics of the Au/Cr-doped SrZrO3/SrRuO3 MIM structures revealed resistance switching behavior with an ON/OFF resistance ratio of 20.
Keywords
NONVOLATILE MEMORY; NONVOLATILE MEMORY; electrical/electronic materials; deposition; defects; epitaxy; atomic force microscopy (AFM); SrZrO3
ISSN
1598-9623
URI
https://pubs.kist.re.kr/handle/201004/130144
DOI
10.1007/s12540-011-0818-4
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KIST Article > 2011
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