Effect of proton irradiation on electrical properties of a-As2S3

Authors
Gautam, SanjeevThakur, AnupShukla, D. K.Shin, H. J.Chae, Keun HwaSingh, K. P.Goyal, Navdeep
Issue Date
2011-06
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF NON-CRYSTALLINE SOLIDS, v.357, no.11-13, pp.2340 - 2343
Abstract
This paper reports the effect of proton irradiation on the electrical properties of a-As2S3 in the temperature range of 323-418 K and frequency range 0.1-100 kHz. The variation of transport property is studied with proton irradiation dose (1 x 10(13) ions/cm(2) and 1 x 10(15) ions/cm(2)). It has been observed that proton irradiation changes the dc conductivity (sigma(dc)), dc activation energy (Delta E-dc) and ac conductivity (sigma(ac)(omega)). The sigma(dc) and sigma(ac) (w) increases with dose of proton irradiation. The value of frequency exponent (s) decreases with the temperature and irradiation dose. These results are explained in terms of change in density of defect states in these glasses. (C) 2010 Elsevier B.V. All rights reserved.
Keywords
THIN-FILMS; CHALCOGENIDE GLASSES; AC CONDUCTION; THIN-FILMS; CHALCOGENIDE GLASSES; AC CONDUCTION; Chalcogenide semiconductor; Proton irradiation; DC conductivity; AC conductivity
ISSN
0022-3093
URI
https://pubs.kist.re.kr/handle/201004/130311
DOI
10.1016/j.jnoncrysol.2010.11.076
Appears in Collections:
KIST Article > 2011
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