Applicability of Steady State Model to Carrier Thermodynamics in In As Quantum Dot

Authors
Abdellatif, M. H.Kopylov, O. S.Song, Jin DongChoi, Won JunCho, Nam KiLee, Jungil
Issue Date
2011-01
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.1, pp.606 - 609
Abstract
The carrier thermodynamics of In As self assembled quantum dot (QD) are investigated. The investigated parameters include the dependence of quantum dot photoluminescence on temperature and the photoluminescence (PL) dependence on the excitation power density. Results are discussed on the basis of steady state model. The model predicts that the photoluminescence integrated intensity has linear dependence on the excitation power density in low temperature range, and super linear in the high temperature range. Our data matches the prediction of the steady state model. In our sample the super linearity starts to take place at T = 150 K and the super linear behavior of the photoluminescence on excitation power density proves that the carrier dynamics in our quantum dot sample are dominated by uncorrelated electron hole pair in the high temperature region.
Keywords
LIGHT-EMISSION; MU-M; LAYER; LIGHT-EMISSION; MU-M; LAYER; Carrier Thermodynamics; Photoluminescence; In As Quantum Dot; Steady State Model
ISSN
1533-4880
URI
https://pubs.kist.re.kr/handle/201004/130755
DOI
10.1166/jnn.2011.3238
Appears in Collections:
KIST Article > 2011
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