Electronic phase coherence and relaxation in graphene field effect transistor
- Authors
- Oh, Youngman; Eom, Jonghwa; Koo, Hyun Cheol; Han, Suk Hee
- Issue Date
- 2010-11
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Citation
- SOLID STATE COMMUNICATIONS, v.150, no.41-42, pp.1987 - 1990
- Abstract
- Using the low-field magnetoresistance measurement we have studied the electronic phase coherence of the graphene field effect transistor for different carrier types and densities. The characteristic time scales such as phase coherence time (tau(phi)), intervalley scattering time (tau(i)), and momentum relaxation time have been deduced by weak localization fit to the magnetoresistance. We found that the magnitude of tau(phi) shows similar magnitudes for both types of charge carriers. In the lower density regime including the Dirac point, tau(phi) increases rapidly as the density of carrier increases. However, tau(i) shows a weak dependence of carrier type and density. The momentum relaxation time becomes saturated below 3 K regardless of carrier type and density, which is in contrast to the temperature dependence of tau(phi). (c) 2010 Elsevier Ltd. All rights reserved.
- Keywords
- WEAK-LOCALIZATION; BERRYS PHASE; WEAK-LOCALIZATION; BERRYS PHASE; Graphene; Phase coherence; Weak localization; Magnetoresistance
- ISSN
- 0038-1098
- URI
- https://pubs.kist.re.kr/handle/201004/130958
- DOI
- 10.1016/j.ssc.2010.08.020
- Appears in Collections:
- KIST Article > 2010
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.