Voltage-Pulse Induced Resistance Switching Characteristics in a Cr-Doped SrZrO3
- Authors
- Yang, Min Kyu; Jung, Kyooho; Kim, Yongmin; Ko, Tae Kuk; Im, Hyunsik; Park, Jae-Wan; Lee, Jeon-Kook
- Issue Date
- 2010-11
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.11
- Abstract
- The time resolved bipolar resistance switching in a Pt/Cr-doped SrZrO3/SrRuO3 device has been investigated using pulse voltage The required switching time between high and low resistance states (HRS and LRS) is studied as a function of the pulse height and width The resistance switching is found to be less dependent on the pulse height in the short pulse region. For LRS -> HRS and HRS -> LRS switching minimum switching times of similar to 500 and similar to 100 ns are required respectively at a pulse height above the dc switching voltage The authors attribute the distinction in the switching time to different switching mechanisms (C) 2010 Japan Society of Applied Physics
- Keywords
- Cr doped SrZrO3; resisive switching; voltage pulse; output current
- ISSN
- 0021-4922
- URI
- https://pubs.kist.re.kr/handle/201004/130966
- DOI
- 10.1143/JJAP.49.111101
- Appears in Collections:
- KIST Article > 2010
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