Perpendicular magnetic tunnel junctions with synthetic ferrimagnetic pinned layer

Authors
Choi, Gyung-MinShin, Il-JaeMin, Byoung-ChulShin, Kyung-Ho
Issue Date
2010-10
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.108, no.7
Abstract
We have fabricated perpendicular magnetic tunnel junctions (p-MTJs) consisting of CoPt/Ru/CoFeB/MgO/CoFeB/Pt. The tunnel magnetoresistance (TMR) of the p-MTJs characterizes the magnetic configurations of the CoPt/Ru/CoFeB pinned layer. The magnetic moment of the CoFeB, which is naturally in-plane, can be aligned to the out-of-plane direction by an indirect exchange coupling with the hcp CoPt alloy having large perpendicular magnetic anisotropy. When the applied field is relatively smaller than the exchange coupling strength, the p-MTJs show a configurationally negative TMR as a consequence of an antiparallel alignment of the CoPt and CoFeB magnetic moments. c 2010 American Institute of Physics. [doi: 10.1063/1.3486059]
Keywords
ROOM-TEMPERATURE; MAGNETORESISTANCE; FILMS; ANISOTROPY; CO/RU; magnetic tunnel junction; perpendicular magnetic anisotropy; tunnel magnetoresistance; synthetic ferrimagnet; interlayer exchange coupling
ISSN
0021-8979
URI
https://pubs.kist.re.kr/handle/201004/131076
DOI
10.1063/1.3486059
Appears in Collections:
KIST Article > 2010
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