Low Voltage Operating InGaZnO4 Thin Film Transistors with Sputter-Deposited PMMA/High-k BST Stacked Gate Dielectric Layers

Authors
Kim, Dong HunCho, Nam GyuKim, Ho-GiKim, Il-Doo
Issue Date
2010-08
Publisher
ELECTROCHEMICAL SOC INC
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.11, pp.H370 - H372
Abstract
This study reports the enhanced electrical properties of InGaZnO4 thin film transistors (TFTs) with sputter-deposited poly(methyl methacrylate) (PMMA)/Ba0.6Sr0.4TiO3 (BST) stacked gate dielectrics. A noticeable reduction in the leakage current density (similar to 10(-8) A/cm(2) at 0.3 MV) was achieved by coating a PMMA overlayer. The InGaZnO4 TFTs utilizing the PMMA (30 nm)/BST (270 nm) stacked gate dielectrics exhibited a high on/off current ratio of 2.6 X 10(6), a high field effect mobility of 10.2 cm(2)/V center dot s, and a low threshold voltage of 1.1 V. Using stacked gate dielectric layers, we realized the low voltage operating InGaZnO4 TFTs on a poly(ethylene terephthalate) substrate. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3479689] All rights reserved.
Keywords
ORGANIC TRANSISTORS; INSULATORS; ORGANIC TRANSISTORS; INSULATORS
ISSN
1099-0062
URI
https://pubs.kist.re.kr/handle/201004/131237
DOI
10.1149/1.3479689
Appears in Collections:
KIST Article > 2010
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