공정 변수에 따른 비정질 인듐갈륨징크옥사이드 산화물 반도체 트랜지스터의 전기적 특성 연구

Abstract

Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have studied the effect of oxygen partial pressure on the threshold voltage(Vth) of a-IGZO TFTs. Interestingly, the Vth value of the oxide TFTs are slightly shifted in the positive direction due to increasing O2 partial pressure from 0.007 to 0.009 mTorr. The device performance is significantly affected by varying O2 ratio, which is closely related with oxygen vacancies provide the needed free carriers for electrical conduction.