Enhanced thermal efficiency for amorphization in nano-structured Ge2Sb2Te5-TiOx films

Authors
Lee, DongbokKang, DongminKwon, Min-HoJun, Hyun-GooKim, Ki-BumLyeo, Ho-KiLee, Hyun-SukCheong, Byung-ki
Issue Date
2010-01
Publisher
ELSEVIER
Citation
CURRENT APPLIED PHYSICS, v.10, no.1, pp.E83 - E86
Abstract
The dynamics of the melt-quenched amorphization in TiOx mixed Ge2Sb2Te5 films were studied using real-time reflectivity measurements with a nanosecond laser pulse and various amounts of TiOx. It was observed that the laser-power required for amorphization was significantly reduced by 27% when 9.1 mol% of TiOx was incorporated with Ge2Sb2Te5. The lowering of the thermal conductivity of the films, due to the increase in the number of interface between the Ge2Sb2Te5 and TiOx phases, led to an increase in the thermal efficiency. Such enhanced thermal efficiency is of great technological importance in phase change storage applications. (C) 2010 Elsevier B.V. All rights reserved.
Keywords
PHASE-TRANSITION CHARACTERISTICS; THIN-FILMS; PHASE-TRANSITION CHARACTERISTICS; THIN-FILMS; Ge2Sb2Te5; Ge2Sb2Te5-TiOx; Amorphization; Laser melting
ISSN
1567-1739
URI
https://pubs.kist.re.kr/handle/201004/131838
DOI
10.1016/j.cap.2009.12.020
Appears in Collections:
KIST Article > 2010
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