Zn1-xBixO (0 <= x <= 0.02) for thermoelectric power generations
- Authors
- Park, K.; Choi, J. W.; Kim, S. -J.; Kim, G. H.; Cho, Y. S.
- Issue Date
- 2009-10-19
- Publisher
- ELSEVIER SCIENCE SA
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.485, no.1-2, pp.532 - 537
- Abstract
- We prepared Zn1-xBixO (0 <= x <= 0.02) thermoelectric materials using the tape casting method and then studied their thermoelectric properties. The electrical conductivity of Zn1-xBixO decreased with an increase in Bi2O3 content The Seebeck coefficient values were negative over the entire temperature range (600-800 degrees C). i e., an n-type conduction. The highest absolute value of the Seebeck coefficient (484 mu V K-1) was obtained for Zn0.9975Bi0.0025O at 800 degrees C. We obtained a significantly enhanced thermoelectric power factor by adding Bi2O3. The highest power factor (3.06 x 10 (4) Wm(-1) K-2) was obtained for Zn0.9975Bi0.0025O at 800 degrees C This value was about six times higher than that of Bi2O3-free ZnO (0.54 x 10(-4) Wm(-1) K-2) at 800 degrees C. (C) 2009 Elsevier B.V. All rights reserved.
- Keywords
- AL-DOPED ZNO; ZNO-BI2O3 CERAMICS; THIN-FILMS; SYSTEM; OXIDE; AL-DOPED ZNO; ZNO-BI2O3 CERAMICS; THIN-FILMS; SYSTEM; OXIDE; Oxide materials; Thermoelectic materials; Solid state reactions; Ceramics; Thermoelectric
- ISSN
- 0925-8388
- URI
- https://pubs.kist.re.kr/handle/201004/132029
- DOI
- 10.1016/j.jallcom.2009.06.021
- Appears in Collections:
- KIST Article > 2009
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