산화물 박막 트랜지스터 동작에 대한 접촉 저항의 영향

Abstract

The TFTs have been fabricated with 3 different geometry S/D electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and 25 μm) and channel lengths (70, 30, and 5 μm) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications.