Mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell

Authors
Jeong, Doo SeokSchroeder, HerbertWaser, Rainer
Issue Date
2009-05
Publisher
AMER PHYSICAL SOC
Citation
PHYSICAL REVIEW B, v.79, no.19
Abstract
We suggest a possible mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell in terms of electrochemical reactions involving oxygen ions/vacancies. The electrochemical reactions are considered to take place at an interface between Pt and TiO2 solid electrolyte, and they modulate the Schottky barrier height at the interface. Calculation results using this proposed mechanism can explain a bipolar switching behavior and semiquantitatively describe experimental data.
Keywords
OXYGEN; RESISTANCE; SRTIO3; OXYGEN; RESISTANCE; SRTIO3; cells (electric); electrochemistry; platinum; Schottky barriers; solid electrolytes; switching; titanium compounds; vacancies (crystal)
ISSN
1098-0121
URI
https://pubs.kist.re.kr/handle/201004/132529
DOI
10.1103/PhysRevB.79.195317
Appears in Collections:
KIST Article > 2009
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