Strain effects, potential profiles, and electronic properties of InAs/GaAs coupled double quantum dots with a disk shape

Authors
Kwon, Hye YoungWoo, Jun TaekLee, Dea UkKim, Tae WhanPark, Young Ju
Issue Date
2009-04
Publisher
WILEY-V C H VERLAG GMBH
Citation
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.246, no.4, pp.854 - 857
Abstract
Strain potentials, potential profiles, and electronic subband energies of InAs/GaAs coupled double quantum dots (QDs) were calculated by using a finite-difference method (FDM) taking into account shape-based strain effects. The shape of the InAs/GaAs coupled double QDs on the basis of the transmission electron microscopy image was modeled to be a truncated hemi-ellipsoid. The interband transition energies from the ground electronic subband to the ground heavy hole band (E-1-HH1) in the InAs/GaAs coupled double QDs as determined from the FDM calcualtions taking into account strain effects, were in qualitatively reasonable agreement with the excitonic peaks corresponding to the (E-1-HH1) interband transistion eneries at several temperatures as determined from the temperature dependent photoluminescence spectra.
ISSN
0370-1972
URI
https://pubs.kist.re.kr/handle/201004/132606
DOI
10.1002/pssb.200880624
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KIST Article > 2009
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