Strain effects, potential profiles, and electronic properties of InAs/GaAs coupled double quantum dots with a disk shape
- Authors
- Kwon, Hye Young; Woo, Jun Taek; Lee, Dea Uk; Kim, Tae Whan; Park, Young Ju
- Issue Date
- 2009-04
- Publisher
- WILEY-V C H VERLAG GMBH
- Citation
- PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v.246, no.4, pp.854 - 857
- Abstract
- Strain potentials, potential profiles, and electronic subband energies of InAs/GaAs coupled double quantum dots (QDs) were calculated by using a finite-difference method (FDM) taking into account shape-based strain effects. The shape of the InAs/GaAs coupled double QDs on the basis of the transmission electron microscopy image was modeled to be a truncated hemi-ellipsoid. The interband transition energies from the ground electronic subband to the ground heavy hole band (E-1-HH1) in the InAs/GaAs coupled double QDs as determined from the FDM calcualtions taking into account strain effects, were in qualitatively reasonable agreement with the excitonic peaks corresponding to the (E-1-HH1) interband transistion eneries at several temperatures as determined from the temperature dependent photoluminescence spectra.
- ISSN
- 0370-1972
- URI
- https://pubs.kist.re.kr/handle/201004/132606
- DOI
- 10.1002/pssb.200880624
- Appears in Collections:
- KIST Article > 2009
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