Fabrication of coupled GaAs quantum dots and their optical properties

Authors
Kim, J.S.Song, J.D.Byeon, C.C.Kang, H.Jeong, M.S.Cho, N.K.Park, S.J.Choi, W.J.Lee, J.I.Kim, J.S.Leem, J.-Y.Yim, S.-Y.Ko, D.-K.Lee, J.
Issue Date
2009-04
Citation
Physica Status Solidi (C) Current Topics in Solid State Physics, v.6, no.4, pp.802 - 805
Abstract
The coupled GaAs quantum dot molecules (QDMs), which were laterally coupled along the [110] direction, were formed by droplet epitaxy. The optical properties of QDMs were investigated by femtosecond laser excited photoluminescence (PL) measurement. When the laser polarization is parallel to [110] direction on the QDMs, the main PL peak is red-shifted by 55 meV from the PL peak measured with the laser polarization parallel to [110] direction. By changing the excitation power, we found that the emission wavelength of the QDMs was strongly depending on the excitation laser polarization. From this result, we carefully suggested that the confined states in QDMs could be tuned by optical field. ? 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Keywords
[110] direction; Droplet epitaxy; Emission wavelength; Excitation lasers; Excitation power; Femto-second laser; GaAs; Laser polarization; Optical field; Photoluminescence measurements; Quantum Dot; Quantum dot molecules; Red-shifted; Crystal growth; Gallium alloys; Laser excitation; Lasers; Optical properties; Optical waveguides; Polarization; Pulsed laser applications; Semiconducting gallium; Semiconductor lasers; Semiconductor quantum dots; GaAs; Quantum dots
ISSN
1862-6351
URI
https://pubs.kist.re.kr/handle/201004/132634
DOI
10.1002/pssc.200880613
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KIST Article > 2009
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